May 2006

©2006 Fairchild Semiconductor Corporation

FDMA291P Rev B (W)

FDMA291P

Single P-Channel 1.8V Specified PowerTrench

®

MOSFET

General Description

This device is designed specifically for battery charge

or load switching in cellular handset and other ultra-

portable applications. It features a MOSFET with low

on-state resistance.

The MicroFET 2x2 package offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

Features

• –6.6 A, –20V. r

• Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

MicroFET 2x2

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

–20

V

Gate-Source Voltage

±8

V

Drain Current

– Continuous

(Note 1a)

–6.6

– Pulsed

–24

A

Power Dissipation for Single Operation

(Note 1a)

2.4

(Note 1b)

0.9

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

52

Thermal Resistance, Junction-to-Ambient

(Note 1b)

145

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

291

FDMA291P

7’’

8mm

3000 units

Pin 1

Source

Drain

3

2

1

4

5

6

Bottom Drain Contact

D

D

D

D

G

S

May 2006