전자부품 데이터시트 검색엔진 |
|
STB60NH02LT4 데이터시트(PDF) 2 Page - STMicroelectronics |
|
STB60NH02LT4 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 11 page STB60NH02L 2/11 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (4) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.14 62.5 300 °C/W °C/W °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 24 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 20 V VDS = 20 V TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 11.8 2.5 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 30 A VGS = 5 V ID = 15 A 0.0085 0.012 0.0105 0.020 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (4) Forward Transconductance VDS = 15 V ID =25 A 27 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz VGS = 0 1400 400 55 pF pF pF RG Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1 Ω |
유사한 부품 번호 - STB60NH02LT4 |
|
유사한 설명 - STB60NH02LT4 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |