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STC05IE150HV 데이터시트(PDF) 1 Page - STMicroelectronics |
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STC05IE150HV 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 7 page November 2006 1/7 7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STC05IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω Features ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ ■ Squared rbsoa, up to 1500 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time ■ In compliance with the 2002/93/EC European Directive Applications ■ Aux SMPS for three phase mains ■ Sepic PFC Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. PRELIMINARY DATA Internal Schematic Diagram VCS(ON) IC RCS(ON) 0.6 V 5 A 0.12 W TO247-4LHV 1 2 3 4 www.st.com Order Codes Part Number Marking Package Packaging STC05IE150HV C05IE150HV TO247-4LHV TUBE Rev 2 |
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