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4 / 15 page Electrical characteristics STGD7NB60K - STGP7NB60K 4/15 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 7A VGE= 15V, IC= 7A, Tc= 125°C 2.3 1.9 2.8 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 57 V ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C VCE=Max rating,TC= 125°C 50 500 µA µA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 7A 3.7 S Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 495 77 13 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480V, IC = 7A, VGE = 15V, (see Figure 17) 32.7 5.9 18.3 45 nC nC nC tscw Short circuit withstand time VCE=0.5V VBR(CES), RG=10Ω VGE=15V, Tj=125°C 10 µs |
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