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STGW39NC60VD 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGW39NC60VD
상세설명  N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STGW39NC60VD 데이터시트(HTML) 5 Page - STMicroelectronics

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STGW39NC60VD
Electrical characteristics
5/13
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)onf
Turn-on delay time
Current rise time
Turn-on current slope
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=25°C (see Figure 15)
33
13
2500
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=125°C (see Figure 15)
32
14
2280
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=25°C (see Figure 15)
33
178
65
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC=390 V, IC= 30A,
RG=10Ω, VGE=15V
Tj=125°C (see Figure 15)
68
238
128
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG=10Ω, VGE= 15V,
Tj= 25°C (see Figure 17)
333
537
870
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG=10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
618
1125
1743
µJ
µJ
µJ
Table 7.
Collector-emitter diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
Vf
Forward on-voltage
If = 15A
If = 15A, Tj = 125°C
1.6
1.4
2.8
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 15A, VR = 40 V,
Tj = 25°C, di/dt =100A/µs
(see Figure 18)
45
56
2.55
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 15A, VR = 40V,
Tj = 125°C,di/dt =100A/µs
(see Figure 18)
100
290
5.8
ns
nC
A


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