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IRF513 데이터시트(PDF) 2 Page - Harris Corporation |
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IRF513 데이터시트(HTML) 2 Page - Harris Corporation |
2 / 7 page 5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF510 IRF511 IRF512 IRF513 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS 100 80 100 80 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . VDGR 100 80 100 80 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 5.6 5.6 4.9 4.9 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 4 4 3.4 3.4 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 20 20 18 18 A Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD 43 43 43 43 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 0.29 0.29 0.29 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 19 19 19 19 mJ Operating and Storage Temperature Range. . . . . . . . . TJ, TSTG -55 to 175 -55 to 175 -55 to 175 -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 10) IRF510 IRF512 100 - - V IRF511, IRF513 80 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, (Figure 7) IRF510, IRF511 5.6 - - A IRF512, IRF513 4.9 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A, (Figures 8, 9) IRF510, IRF511 - 0.4 0.54 Ω IRF512, IRF513 - 0.5 0.74 Ω Forward Transconductance (Note 2) gfs VGS = 50V, ID = 3.4A, (Figure 12) 1.3 2.0 - S Turn-On Delay Time td(ON) ID ≈ 5.6A, RGS = 24Ω , VDD = 50V, RL = 9Ω VDD = 50V, VGS = 10V, (Figures 17, 18) MOSFET switching times are essentially independent of operating temperature - 8 11 ns Rise Time tr -25 36ns Turn-Off Delay Time td(OFF) -15 21ns Fall Time tf -12 21ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is essentially independent of operating temperature - 5.0 7.7 nC Gate to Source Charge Qgs - 2.0 - nC Gate to Drain “Miller” Charge Qgd - 3.0 - nC IRF510, IRF511, IRF512, IRF513 |
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