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STP80NS04ZB 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP80NS04ZB 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 6 page 3/6 STP80NS04ZB SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 20 V ID= 80 A VGS= 10V 80 20 27 105 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 30 V ID = 80 A RG = 4.7Ω, VGS = 10 V (Inductive Load, Figure 5) 115 80 210 150 105 280 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 80 320 A A VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 25 V Tj = 150°C (see test circuit, Figure 5) 90 0.18 4 ns µC A ELECTRICAL CHARACTERISTICS (continued) |
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