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BAS116LT1 데이터시트(PDF) 2 Page - ON Semiconductor |
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BAS116LT1 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 4 page BAS116LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 75 − Vdc Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C) IR − − 5.0 80 nAdc Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) VF − − − − 900 1000 1100 1250 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 3.0 ms 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr +10 V 2.0 k 820 W 0.1 mF DUT VR 100 mH 0.1 mF 50 W Output Pulse Generator 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
유사한 부품 번호 - BAS116LT1_04 |
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유사한 설명 - BAS116LT1_04 |
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