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MJ15002 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 MJ15002
상세설명  Complementary Silicon Power Transistors
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ15002 데이터시트(HTML) 2 Page - ON Semiconductor

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MJ15001 (NPN), MJ15002 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC, = 200 mAdc, IB = 0)
VCEO(sus)
140
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ICEX
100
2.0
mAdc
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
250
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1 s (non−repetitive))
(VCE = 100 Vdc, t = 1 s (non−repetitive))
IS/b
5.0
0.5
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
hFE
25
150
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
VCE(sat)
1.0
Vdc
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
VBE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
fT
2.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
1000
pF
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle v 2%.
5
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5
7
10
200
10
2
2
3
50 70 100
20
30
7
200
1
3
0.5
0.2
0.7
0.3
TC = 25°C
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ (pk) = 200°C; TC is
variable
depending
on
conditions.
At
high
case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.


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