MJE5742G datasheet(5/6 Pages) ONSEMI

부품명	MJE5742G

상세설명	NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS

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MJE5740, MJE5742

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5

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TC = 25_C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC ≥ 25_C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 6 may be found at

any case temperature by using the appropriate curve on

Figure 1.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current condition allowable

during reverse biased turnoff. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 7 gives the complete RBSOA

characteristics.

The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 6. Forward Bias Safe Operating Area

Figure 7. Reverse Bias Safe Operating Area

16

14

12

8

0

2

4

10

100

200

300

500

0

400

16

5

10

8

1

0.02

100

0.1

10

20

200

400

3

0.5

50

0.3

0.05

dc

1ms

100 ms

MJE5742

MJE5740

VBE(off) ≤ 5 V

TJ = 100°C

6

CURVES APPLY BELOW RATED VCEO

10 ms

MJE5742

MJE5740

5ms

BONDING WIRE LIMIT

THERMAL LIMIT

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

IC, COLLECTOR CURRENT (AMPS)

0.5 0.7

1

2

10

7

5

2

1

0.7

0.2

0.3

5

0.5

10

3

0.3

0.2

7

IC, COLLECTOR CURRENT (AMPS)

0.5 0.7 1

2

10

0.7

0.5

0.2

0.1

0.07

0.02

0.3

Figure 8. Turn−On Time

5

0.05

1

Figure 9. Turn−Off Time

3

VCC = 250 V

IB1 = IB2

IC/IB = 20

ts

tr

tf

td

VCC = 250 V

IB1 = IB2

IC/IB = 20

0.3

0.03

0.2

7

RESISTIVE SWITCHING PERFORMANCE

유사한 부품 번호 - MJE5742G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJE5742G	89Kb / 6P	NPN Silicon Power Darlington Transistors January, 2015 ??Rev. 12

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