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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MKP1V120 데이터시트(HTML) 3 Page - ON Semiconductor |
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MKP1V120 데이터시트(HTML) 3 Page - ON Semiconductor |
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MKP1V120 Series http://onsemi.com 3 + Current + Voltage VTM IH Symbol Parameter IDRM Off State Leakage Current VDRM Off State Repetitive Blocking Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage ITM Peak on State Current Voltage Current Characteristic of SIDAC VDRM IDRM ITM Slope = RS V(BO) R S + (V (BO) –VS) (I S –I(BO)) I(BO) IS VS (Bidirectional Device) 0.8 0 IT(RMS), ON−STATE CURRENT (AMPS) 140 120 40 TA, MAXIMUM AMBIENT TEMPERATURE (°C) 0.4 2.0 3.0 0 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 0.3 0.5 0.2 0.1 1.0 4.0 0.2 0.6 100 0.7 1.0 130 100 0 1.0 0.6 0.2 40 20 60 0.4 0.8 0.2 0.6 0 IT(RMS), ON−STATE CURRENT (AMPS) 0.50 0.75 0.25 0.4 0.8 1.00 1.25 TJ = 25°C Conduction Angle = 180 °C 1.6 1.2 1.0 1.4 2.0 1.8 110 90 80 60 70 50 80 120 140 5.0 3.0 5.0 2.0 7.0 10 1.0 TJ = 25°C 125 °C TJ = 125°C Sine Wave Conduction Angle = 180 °C Assembled in PCB Lead Length = 3/8″ TJ = 125°C Sine Wave Conduction Angle = 180 °C TL 3/8″ 3/8″ Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature Figure 3. Typical On−State Voltage Figure 4. Typical Power Dissipation |
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