MV209G datasheet(2/4 Pages) ONSEMI

부품명	MV209G

상세설명	Silicon Epicap Diodes

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MMBV109LT1, MV209

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Ct, Diode Capacitance

VR = 3.0 Vdc, f = 1.0 MHz

pF

Q, Figure of Merit

VR = 3.0 Vdc

f = 50 MHz

CR, Capacitance Ratio

C3/C25

f = 1.0 MHz (Note 1)

Device

Package

Shipping†

Min

Nom

Max

Min

Max

MMBV109LT1

SOT−23

3,000 / Tape & Reel

26

29

32

200

5.0

6.5

MMBV109LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBV109LT3

SOT−23

10,000 / Tape & Reel

MMBV109LT3G

SOT−23

(Pb−Free)

10,000 / Tape & Reel

MV209

TO−92

1,000 Units / Bag

MV209G

TO−92

(Pb−Free)

1,000 Units / Bag

1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.

Figure 1. DIODE CAPACITANCE

40

32

24

16

8

0

1

3

10

30

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. FIGURE OF MERIT

f, FREQUENCY (MHz)

Figure 3. LEAKAGE CURRENT

TA, AMBIENT TEMPERATURE

Figure 4. DIODE CAPACITANCE

TA, AMBIENT TEMPERATURE

10

1000

100

10

100

1000

100

−60

0.01

0.001

0

+40

+100

1.04

−75

1.02

1.00

0.98

0.96

−25

+25

+75

+125

VR = 3.0 Vdc

f = 1.0 MHz

Ct [ Cc + Cj

36

28

20

12

4

f = 1.0 MHz

TA = 25°C

VR = 3 Vdc

TA = 25°C

VR = 20 Vdc

+120 +140

+80

+60

+20

−40

−20

0.1

1.0

10

20

2.0

0.2

0.02

0.002

0.006

0.06

0.6

6.0

60

−50

0

+50

+100

1.03

1.01

0.99

0.97

NOTES ON TESTING AND SPECIFICATIONS

유사한 부품 번호 - MV209G

제조업체	부품명	데이터시트	상세설명
Leshan Radio Company	MV209	146Kb / 2P	Silicon Epicap Diode
ON Semiconductor	MV209	69Kb / 8P	Silicon Epicap Diodes March, 2001 ??Rev. 1

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유사한 설명 - MV209G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MMVL109T1	45Kb / 3P	Silicon Epicap Diodes February, 2006 ??Rev. 1
ON Semiconductor	MBV109T1	69Kb / 8P	Silicon Epicap Diodes March, 2001 ??Rev. 1
Leshan Radio Company	MMVL109T1	40Kb / 2P	Silicon Epicap Diode
Leshan Radio Company	MMBV109LT1	146Kb / 2P	Silicon Epicap Diode
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MV209G 데이터시트(PDF) 2 Page - ON Semiconductor

MV209G 데이터시트(HTML) 2 Page - ON Semiconductor

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