CAT24C256XI-GT3 datasheet(2/14 Pages) CATALYST | 256-Kb I2C CMOS Serial EEPROM

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CAT24C256XI-GT3 데이터시트(PDF) 2 Page - Catalyst Semiconductor

부품명	CAT24C256XI-GT3

상세설명	256-Kb I2C CMOS Serial EEPROM

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제조업체	CATALYST [Catalyst Semiconductor]

홈페이지	http://www.catalyst-semiconductor.com

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CAT24C256

2

Doc. No. 04, Rev. D

© 2007 by Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

AbSOluTE MAXIMuM RATIngS(1)

Storage Temperature

-65°C to +50°C

Voltage on Any Pin with Respect to Ground(2)

-0.5 V to +6.5 V

RElIAbIlITy CHARACTERISTICS(3)

Symbol Parameter

Min

units

NEND(4) Endurance

,000,000

Program/ Erase Cycles

TDR

Data Retention

00

Years

D.C. OPERATIng CHARACTERISTICS

VCC = .8 V to 5.5 V, TA = -40°C to 85°C, unless otherwise specified.

Symbol Parameter

Test Conditions

Min

Max

units

ICC

Supply Current

Read or Write at 400 kHz

mA

ISB

Standby Current

All I/O Pins at GND or VCC

µA

IL

I/O Pin Leakage

Pin at GND or VCC

µA

VIL

Input Low Voltage

-0.5

VCC x 0.3

V

VIH

Input High Voltage

VCC x 0.7 VCC + 0.5

V

VOL

Output Low Voltage

VCC > 2.5 V, IOL = 3.0 mA

0.4

V

VOL2

Output Low Voltage

VCC > .8 V, IOL = .0 mA

0.2

V

PIn IMPEDAnCE CHARACTERISTICS

TA = 25°C, f = 400 kHz, VCC = 5 V

Symbol Parameter

Conditions

Min

Max

units

CIN(3)

SDA I/O Pin Capacitance

VIN = 0 V

8

pF

CIN(3)

Input Capacitance (other pins)

VIN = 0 V

6

pF

notes:

() Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this

specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.

(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may

undershoot to no less than -.5 V or overshoot to no more than VCC + .5 V, for periods of less than 20 ns.

(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q00

and JEDEC test methods.

(4) Page Mode, VCC = 5 V, 25°C

유사한 부품 번호 - CAT24C256XI-GT3

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	CAT24C256XI-GT3	187Kb / 14P	256 kb I2C CMOS Serial EEPROM November, 2009 ??Rev. 9

유사한 설명 - CAT24C256XI-GT3

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	CAT24C256WI-G	193Kb / 18P	256 kb I2C CMOS Serial EEPROM October, 2012 ??Rev. 13
	CAT24C256XI	205Kb / 18P	256 kb I2C CMOS Serial EEPROM January, 2014 ??Rev. 14
	CAV24C256WE-GT3	157Kb / 11P	256-Kb I2C CMOS Serial EEPROM November, 2012 ??Rev. 0
	CAT24C256LI	193Kb / 18P	256 kb I2C CMOS Serial EEPROM October, 2012 ??Rev. 13
	CAT24C256YI-G	205Kb / 18P	256 kb I2C CMOS Serial EEPROM January, 2014 ??Rev. 14
	CAT24C256HU4IGT3	193Kb / 18P	256 kb I2C CMOS Serial EEPROM October, 2012 ??Rev. 13
	CAT24C256	187Kb / 14P	256 kb I2C CMOS Serial EEPROM November, 2009 ??Rev. 9
	CAV24C256	265Kb / 14P	EEPROM Serial 256-Kb I2C May, 2018 ??Rev. 1
	CAT24C256	375Kb / 20P	EEPROM Serial 256-Kb I2C May, 2018 ??Rev. 15
	CAV24C256	157Kb / 11P	256-Kb CMOS Serial EEPROM November, 2012 ??Rev. 0

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