전자부품 데이터시트 검색엔진 |
|
CAT28C65BJ-90T 데이터시트(PDF) 8 Page - Catalyst Semiconductor |
|
CAT28C65BJ-90T 데이터시트(HTML) 8 Page - Catalyst Semiconductor |
8 / 13 page CAT28C65B 8 Doc. No. 1009, Rev. E ADDRESS CE OE WE DATA OUT tAS DATA IN DATA VALID HIGH-Z tAH tWC tOEH tDH tDS tOES tBLC tCH tCS tCW RDY/BUSY tRB HIGH-Z HIGH-Z falling edge of WE or CE, whichever occurs last. Data, conversely, is latched on the rising edge of WE or CE, whichever occurs first. Once initiated, a byte write cycle automatically erases the addressed byte and the new data is written within 5 ms. Page Write The page write mode of the CAT28C65B (essentially an extended BYTE WRITE mode) allows from 1 to 32 bytes of data to be programmed within a single EEPROM write cycle. This effectively reduces the byte-write time by a factor of 32. Following an initial WRITE operation ( WE pulsed low, for tWP, and then high) the page write mode can begin by issuing sequential WE pulses, which load the address and data bytes into a 32 byte temporary buffer. The page address where data is to be written, specified by bits A5 to A12, is latched on the last falling edge of WE. Each byte within the page is defined by address bits A0 to A4 Figure 5. Byte Write Cycle [CE Controlled] Figure 6. Page Mode Write Cycle OE CE WE ADDRESS I/O tWP tBLC BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2 LAST BYTE tWC |
유사한 부품 번호 - CAT28C65BJ-90T |
|
유사한 설명 - CAT28C65BJ-90T |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |