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AT89C5130A-M 데이터시트(PDF) 28 Page - ATMEL Corporation |
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AT89C5130A-M 데이터시트(HTML) 28 Page - ATMEL Corporation |
28 / 186 page 28 AT89C5130A/31A-M 4337G–USB–11/06 Program/Code Memory The AT89C5130A/31A-M implement 16/ 32 Kbytes of on-chip program/code memory. Figure 13 shows the split of internal and external program/code memory spaces depending on the product. The Flash memory increases EPROM and ROM functionality by in-circuit electrical era- sure and programming. Thanks to the internal charge pump, the high voltage needed for programming or erasing Flash cells is generated on-chip using the standard VDD volt- age. Thus, the Flash Memory can be programmed using only one voltage and allows In- application Software Programming commonly known as IAP. Hardware programming mode is also available using specific programming tool. Figure 13. Program/Code Memory Organization Note: If the program executes exclusively from on-chip code memory (not from external mem- ory), beware of executing code from the upper byte of on-chip memory (3FFFh/7FFFh) and thereby disrupting I/O Ports 0 and 2 due to external prefetch. Fetching code constant from this location does not affect Ports 0 and 2. External Code Memory Access Memory Interface The external memory interface comprises the external bus (Port 0 and Port 2) as well as the bus control signals (PSEN, and ALE). Figure 14 shows the structure of the external address bus. P0 carries address A7:0 while P2 carries address A15:8. Data D7:0 is multiplexed with A7:0 on P0. Table 33 describes the external memory interface signals. Figure 14. External Code Memory Interface Structure 0000h 32 Kbytes 7FFFh Flash 32 Kbytes External Code FFFFh AT89C5131A 8000h 0000h 16 Kbytes 3FFFh Flash 48 Kbytes External Code FFFFh AT89C5130A 4000h Flash EPROM AT89C5130A AT89C5131 P2 P0 AD7:0 A15:8 A7:0 A15:8 D7:0 A7:0 ALE Latch OE PSEN |
유사한 부품 번호 - AT89C5130A-M_06 |
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유사한 설명 - AT89C5130A-M_06 |
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