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BYM26B 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BYM26B 데이터시트(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1996 May 24 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the “General Part of associated Handbook”. Cd diode capacitance f = 1 MHz; VR =0V; see Figs 17 and 18 BYM26A to C − 85 − pF BYM26D and E − 75 − pF BYM26F and G − 65 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.21 BYM26A to C −− 7A/ µs BYM26D and E −− 6A/ µs BYM26F and G −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
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