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BYM359DX 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BYM359DX 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Dual diode BYM359DX fast, high-voltage Fig.1. Definition of t rr, Qs and Irrm Fig.2. Definition of V fr Fig.3. Modulator maximum forward dissipation, P F = f(IF(AV)); square wave current waveform; parameter D = duty cycle = t p/T. Fig.4. Modulator maximum forward dissipation, P F = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = I F(RMS)/IF(AV). Fig.5. Modulator maximum non-repetitive rms forward current. I F = f(tp); sinusoidal current waveform; T j = 150˚C prior to surge with reapplied VRWM. Fig.6. Modulator typical and maximum forward characteristic; I F = f(VF); parameter Tj 0 2 4 6 8 BY329 IF(AV) / A PF / W 15 10 5 0 4 2.8 2.2 1.9 a = 1.57 Ths(max) / C 150 78 102 126 Vo = 1.25 V Rs = 0.03 Ohms 100% time dI dt F I R I F I rrm trr 25% Qs 1ms 10ms 0.1s 1s 10s tp / s IFS(RMS) / A BY229 80 70 60 50 40 30 20 10 0 IFSM time time V F V fr V F I F 0 1 BY229F VF / V IF / A 30 20 10 0 2 0.5 1.5 max typ Tj = 150 C Tj = 25 C 0 2 4 6 8 10 12 BY329 IF(AV) / A PF / W 20 15 10 5 0 Ths(max) / C 150 54 78 102 126 0.5 0.2 0.1 D = 1.0 D = tp tp T T I t Vo = 1.25 V Rs = 0.03 Ohms March 2000 3 Rev 1.000 |
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