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AD8063ARTZ-R2 데이터시트(PDF) 6 Page - Analog Devices

부품명 AD8063ARTZ-R2
상세설명  Low Cost, 300 MHz Rail-to-Rail Amplifiers
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제조업체  AD [Analog Devices]
홈페이지  http://www.analog.com
Logo AD - Analog Devices

AD8063ARTZ-R2 데이터시트(HTML) 6 Page - Analog Devices

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AD8061/AD8062/AD8063
Rev. D | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
8 V
Internal Power Dissipation1
8-lead SOIC (R)
0.8 W
5-lead SOT-23 (RT)
0.5 W
6-lead SOT-23 (RT)
0.5 W
8-lead MSOP (RM)
0.6 W
Input Voltage (Common-Mode)
(−VS − 0.2 V) to (+VS − 1.8 V)
Differential Input Voltage
±VS
Output Short-Circuit Duration
Observe Power Derating Curves
Storage Temperature Range
R-8, RM-8, SOT-23-5, SOT-23-6
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
1Specification is for device in free air.
8-Lead SOIC: θJA = 160°C/W; θJC = 56°C/W.
5-Lead SOT-23: θJA = 240°C/W; θJC = 92°C/W.
6-Lead SOT-23: θJA = 230°C/W; θJC = 92°C/W.
8-Lead MSOP: θJA = 200°C/W; θJC = 44°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD806x is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of 175°C for an extended period can result in
device failure. While the AD806x is internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded
under all conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
AMBIENT TEMPERATURE (
°C)
2.0
1.0
0
–50 –40 –30
70
80
90
1.5
0.5
60
50
40
30
0
–10
–20
20
10
TJ = 150°C
MSOP
SOT-23-5, -6
8-LEAD SOIC
PACKAGE
Figure 6. Maximum Power Dissipation vs. Temperature for
AD8061/AD8062/AD8063
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.


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