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BZA100 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BZA100 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Dec 02 3 Philips Semiconductors Product specification 18-fold ESD transient voltage suppressor BZA100 THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point one or more diodes loaded 56.5 K/W Rth j-a thermal resistance from junction to ambient 100 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VZ working voltage IZ = 5 mA 6.4 6.8 7.2 V VF forward voltage IF = 200 mA −− 1.3 V VZSM non-repetitive peak reverse voltage tp = 1 ms; IZSM = 2.5 A −− 11 V IR reverse current VR = 5.25 V −− 2 µA rdif differential resistance IZ =1mA −− 40 Ω IZ =5mA −− 8 Ω SZ temperature coefficient of working voltage IZ = 5mA − 3 − mV/K Cd diode capacitance see Fig.5 VR = 0; f = 1 MHz −− 120 pF VR = 5.25 V; f = 1 MHz −− 60 pF |
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