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BZA456A 데이터시트(PDF) 3 Page - NXP Semiconductors |
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3 / 12 page 1999 May 25 3 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor BZA456A THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point one or more diodes loaded 125 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VZ working voltage IZ = 1 mA 5.32 5.6 5.88 V VF forward voltage IF = 200 mA −− 1.3 V VZSM non-repetitive peak reverse voltage IZSM = 3 A; tp =1ms −− 8V IR reverse current VR =3V −− 2 µA rdif differential resistance IZ = 250 µA −− 1600 Ω IZ =1mA −− 400 Ω SZ temperature coefficient of working voltage IZ =5mA − 1.2 − mV/K Cd diode capacitance see Fig.5 VR = 0; f = 1 MHz −− 240 pF VR = 3 V; f = 1 MHz −− 140 pF |
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