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BZA462A 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BZA462A
상세설명  Quadruple ESD transient voltage suppressor
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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1999 May 25
2
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA462A
FEATURES
• ESD rating >15 kV, according to IEC1000-4-2
• SOT457 surface mount package
• Common anode configuration
• Non-clamping range −0.5 to 6.2 V
• Maximum reverse peak power dissipation:
24 W at tp =1ms
• Maximum clamping voltage at peak pulse current:
9 V at IZSM = 2.66 A.
APPLICATIONS
• Computers and peripherals
• Audio and video equipment
• Communication systems
• Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 6.2 V level.
PINNING
PIN
DESCRIPTION
1
cathode 1
2
common
3
cathode 2
4
cathode 3
5
common
6
cathode 4
Fig.1 Simplified outline (SOT457) and symbol.
handbook, halfpage
13
2
4
5
6
1
3
4
6
2
5
Top view
MAM357
Marking code: Z2t.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Ts is the temperature at the soldering point of the anode pin.
2. DC working current limited by Ptot max.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Ts =60 °C; note 1
note 2
mA
IF
continuous forward current
Ts =60 °C
100
mA
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
3.75
A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse; see Fig.2
2.66
A
Ptot
total power dissipation
Ts =60 °C; see Fig.3
720
mW
PZSM
non repetitive peak reverse power
dissipation
square pulse; tp = 1 ms; see Fig.4
24
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C


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