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FQP6N40CF 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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1 / 10 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF Rev. B February 2006 FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics TO-220 FQP Series G S D TO-220F FQPF Series G S D D G S Symbol Parameter FQP6N40CF FQPF6N40CF Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 6 6* A - Continuous (TC = 100°C) 3.6 3.6* A IDM Drain Current - Pulsed (Note 1) 24 24* A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 73 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 73 38 W - Derate above 25°C 0.58 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP6N40CF FQPF6N40CF Units RθJC Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W * Drain current limited by maximum junction temperature |
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