4N35, 4N36, 4N37

OPTOCOUPLERS

SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

2

POST OFFICE BOX 655303

electrical characteristics at 25

°C free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = 100 µA, IE = 0,

IF = 0

70†

V

V(BR)CEO

Collector-emitter breakdown voltage

IC = 10 mA,

IB = 0,

IF = 0

30†

V

V(BR)EBO

Emitter-base breakdown voltage

IE = 100 µA,

IC = 0,

IF = 0

7†

V

IR

Input diode static reverse current

VR = 6 V

10†

µA

IIO

Input-to-output current

VIO = rated peak value,

t = 8 ms

100

mA

VCE = 10 V,

IF = 10 mA,

IB = 0

10†

IC(on)

On-state collector current

VCE = 10 V,

TA = – 55°C

IF = 10 mA,

IB = 0,

4†

mA

()

VCE = 10 V,

TA = 100°C

IF = 10 mA,

IB = 0,

4†

VCE = 10 V,

IF = 0

IB = 0

1

50

nA

IC(off)

Off-state collector current

VCE = 30 V,

TA = 100°C

IF = 0,

IB = 0,

500†

µA

hFE

Transistor static forward current transfer ratio

VCE = 5 V,

IC = 10 mA,

IF = 0

500

IF = 10 mA

0.8†

1.5†

VF

Input diode static forward voltage

IF = 10 mA,

TA = – 55°C

0.9†

1.7†

V

IF = 10 mA,

TA = 100°C

0.7†

1.4†

VCE(sat)

Collector-emitter saturation voltage

IC = 0.5 mA, IF = 10 mA,

IB = 0 mA

0.3†

V

rIO

Input-to-output internal resistance

VIO = 500 V, See Note 6

1011†

Ω

Cio

Input-to-output capacitance

VIO = 0,

f = 1 MHz,

See Note 6

1

2.5†

pF

† JEDEC registered data

NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.

switching characteristics at 25

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ton

Time-on time

VCC = 10 V,

IC(on) = 2 mA,

7

10

µs

toff

Turn-off time

CC

RL = 100 Ω,

C(on)

See Figure 1

7

10

µs

† JEDEC registered data