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CA3102 데이터시트(PDF) 2 Page - Intersil Corporation |
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CA3102 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 11 page 2 Absolute Maximum Ratings Thermal Information Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Thermal Resistance (Typical, Note 2) θ JA ( oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25 oC PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER Input Offset Voltage (Figures 1, 4) VIO - 0.25 5.0 mV Input Offset Current (Figure 1) IIO I3 = I9 = 2mA - 0.3 3.0 µA Input Bias Current (Figures 1, 5) IB - 13.5 33 µA Temperature Coefficient Magnitude of Input Offset Voltage -1.1 - µV/oC DC CHARACTERISTICS FOR EACH TRANSISTOR DC Forward Base-to-Emitter Voltage (Figure 6) VBE VCE = 6V, IC = 1mA 674 774 874 mV Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) VCE = 6V, IC = 1mA - -0.9 - mV/oC Collector Cutoff Current (Figure 7) ICBO VCB = 10V, IE = 0 - 0.0013 100 nA Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, IB = IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER 1/f Noise Figure (For Single Transistor) (Figure 12) NF f = 100kHz, RS = 500Ω, IC = 1mA -1.5 - dB Gain Bandwidth Product (For Single Transistor) (Figure 11) fT VCE = 6V, IC = 5mA - 1.35 - GHz Collector-Base Capacitance (Figure 8) CCB IC = 0, VCB = 5V Note 3 - 0.28 - pF Note 4 - 0.15 - pF Collector-Substrate Capacitance (Figure 8) CCI IC = 0, VCI = 5V - 1.65 - pF Common Mode Rejection Ratio CMRR I3 = I9 = 2mA - 100 - dB AGC Range, One Stage (Figure 2) AGC Bias Voltage = -6V - 75 - dB Voltage Gain, Single-Ended Output (Figures 2, 9, 10) A Bias Voltage = -4.2V, f = 10MHz 18 22 - dB ∆V IO ∆T ---------------- ∆V BE ∆T --------------- CA3102 |
유사한 부품 번호 - CA3102_05 |
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유사한 설명 - CA3102_05 |
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