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IRFP460 데이터시트(PDF) 6 Page - NXP Semiconductors |
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IRFP460 데이터시트(HTML) 6 Page - NXP Semiconductors |
6 / 7 page Philips Semiconductors Product specification PowerMOS transistors IRFP460 Avalanche energy rated MECHANICAL DATA Fig.19. SOT429; pin 2 connected to mounting base Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8". REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT429 TO-247 98-04-07 99-08-04 0 10 20 mm scale Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 E P A A1 β w M b 12 3 e e b1 b2 c Q q L Y R D S L1 (1) α UNIT A1 D b E e w S R q Q P LY b2 b1 c L1 (1) DIMENSIONS (mm are the original dimensions) A β α mm 17 ° 13 ° 6 ° 4 ° 5.3 4.7 1.9 1.7 2.2 1.8 1.2 0.9 3.2 2.8 0.9 0.6 21 20 16 15 5.45 3.7 3.3 2.6 2.4 5.3 7.5 7.1 0.4 15.7 15.3 16 15 4.0 3.6 3.5 3.3 Note 1. Tinning of terminals are uncontrolled within zone L1. September 1999 6 Rev 1.000 |
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