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IRFP460 데이터시트(PDF) 1 Page - NXP Semiconductors |
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IRFP460 데이터시트(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification PowerMOS transistors IRFP460 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching V DSS = 500 V • Stable off-state characteristics • High thermal cycling performance I D = 20 A • Low thermal resistance R DS(ON) ≤ 0.27 Ω GENERAL DESCRIPTION PINNING SOT429 (TO247) N-channel, enhancement mode PIN DESCRIPTION field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. tab drain The IRFP460 is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = 25 ˚C to 150˚C - 500 V V DGR Drain-gate voltage T j = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V V GS Gate-source voltage - ± 30 V I D Continuous drain current T mb = 25 ˚C; V GS = 10 V - 20 A T mb = 100 ˚C; VGS = 10 V - 12.4 A I DM Pulsed drain current T mb = 25 ˚C - 80 A P D Total dissipation T mb = 25 ˚C - 250 W T j, Tstg Operating junction and - 55 150 ˚C storage temperature range AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, I AS = 20 A; - 1300 mJ energy t p = 0.2 ms; Tj prior to avalanche = 25˚C; V DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V E AR Repetitive avalanche energy 1 I AR = 20 A; tp = 2.5 µs; Tj prior to - 32 mJ avalanche = 25˚C; R GS = 50 Ω; VGS = 10 V I AS, IAR Repetitive and non-repetitive - 20 A avalanche current d g s 2 3 1 1 pulse width and repetition rate limited by T j max. September 1999 1 Rev 1.000 |
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