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IRFP460 데이터시트(PDF) 2 Page - NXP Semiconductors |
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IRFP460 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification PowerMOS transistors IRFP460 Avalanche energy rated THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 0.5 K/W to mounting base R th j-a Thermal resistance junction SOT429 package, in free air - 45 - K/W to ambient ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 500 - - V voltage ∆V (BR)DSS / Drain-source breakdown V DS = VGS; ID = 0.25 mA - 0.1 - %/K ∆T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = 10 V; ID = 10 A - 0.2 0.27 Ω V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V g fs Forward transconductance V DS = 30 V; ID = 10 A 13 18 - S I DSS Drain-source leakage current V DS = 500 V; VGS = 0 V - 2 50 µA V DS = 400 V; VGS = 0 V; Tj = 125 ˚C - 100 1000 µA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 20 A; VDD = 400 V; VGS = 10 V - 147 190 nC Q gs Gate-source charge - 12 18 nC Q gd Gate-drain (Miller) charge - 78 100 nC t d(on) Turn-on delay time V DD = 250 V; RD = 12 Ω; - 23 - ns t r Turn-on rise time R G = 3.9 Ω -72 - ns t d(off) Turn-off delay time - 150 - ns t f Turn-off fall time - 75 - ns L d Internal drain inductance Measured from tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 3000 - pF C oss Output capacitance - 480 - pF C rss Feedback capacitance - 270 - pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current T mb = 25˚C - - 20 A (body diode) I SM Pulsed source current (body T mb = 25˚C - - 80 A diode) V SD Diode forward voltage I S = 20 A; VGS = 0 V - - 1.5 V t rr Reverse recovery time I S = 20 A; VGS = 0 V; dI/dt = 100 A/µs - 900 - ns Q rr Reverse recovery charge - 15 - µC September 1999 2 Rev 1.000 |
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