전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

IRFP460 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 IRFP460
상세설명  PowerMOS transistors Avalanche energy rated
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRFP460 데이터시트(HTML) 2 Page - NXP Semiconductors

  IRFP460 Datasheet HTML 1Page - NXP Semiconductors IRFP460 Datasheet HTML 2Page - NXP Semiconductors IRFP460 Datasheet HTML 3Page - NXP Semiconductors IRFP460 Datasheet HTML 4Page - NXP Semiconductors IRFP460 Datasheet HTML 5Page - NXP Semiconductors IRFP460 Datasheet HTML 6Page - NXP Semiconductors IRFP460 Datasheet HTML 7Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Philips Semiconductors
Product specification
PowerMOS transistors
IRFP460
Avalanche energy rated
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
0.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT429 package, in free air
-
45
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
500
-
-
V
voltage
∆V
(BR)DSS / Drain-source breakdown
V
DS = VGS; ID = 0.25 mA
-
0.1
-
%/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS = 10 V; ID = 10 A
-
0.2
0.27
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 0.25 mA
2.0
3.0
4.0
V
g
fs
Forward transconductance
V
DS = 30 V; ID = 10 A
13
18
-
S
I
DSS
Drain-source leakage current V
DS = 500 V; VGS = 0 V
-
2
50
µA
V
DS = 400 V; VGS = 0 V; Tj = 125 ˚C
-
100
1000
µA
I
GSS
Gate-source leakage current V
GS = ±30 V; VDS = 0 V
-
10
200
nA
Q
g(tot)
Total gate charge
I
D = 20 A; VDD = 400 V; VGS = 10 V
-
147
190
nC
Q
gs
Gate-source charge
-
12
18
nC
Q
gd
Gate-drain (Miller) charge
-
78
100
nC
t
d(on)
Turn-on delay time
V
DD = 250 V; RD = 12 Ω;
-
23
-
ns
t
r
Turn-on rise time
R
G = 3.9 Ω
-72
-
ns
t
d(off)
Turn-off delay time
-
150
-
ns
t
f
Turn-off fall time
-
75
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
3000
-
pF
C
oss
Output capacitance
-
480
-
pF
C
rss
Feedback capacitance
-
270
-
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
T
mb = 25˚C
-
-
20
A
(body diode)
I
SM
Pulsed source current (body
T
mb = 25˚C
-
-
80
A
diode)
V
SD
Diode forward voltage
I
S = 20 A; VGS = 0 V
-
-
1.5
V
t
rr
Reverse recovery time
I
S = 20 A; VGS = 0 V; dI/dt = 100 A/µs
-
900
-
ns
Q
rr
Reverse recovery charge
-
15
-
µC
September 1999
2
Rev 1.000


유사한 부품 번호 - IRFP460

제조업체부품명데이터시트상세설명
logo
STMicroelectronics
IRFP460 STMICROELECTRONICS-IRFP460 Datasheet
91Kb / 8P
   N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET
logo
Intersil Corporation
IRFP460 INTERSIL-IRFP460 Datasheet
55Kb / 7P
   20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
logo
International Rectifier
IRFP460 IRF-IRFP460 Datasheet
163Kb / 6P
   Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
logo
IXYS Corporation
IRFP460 IXYS-IRFP460 Datasheet
77Kb / 4P
   MegaMOS - Power MOSFET
logo
Vishay Siliconix
IRFP460 VISHAY-IRFP460 Datasheet
135Kb / 8P
   Power MOSFET
S-81360-Rev. A, 28-Jul-08
More results

유사한 설명 - IRFP460

제조업체부품명데이터시트상세설명
logo
NXP Semiconductors
PHP3N60E PHILIPS-PHP3N60E Datasheet
79Kb / 9P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.200
PHP11N50E PHILIPS-PHP11N50E Datasheet
41Kb / 7P
   PowerMOS transistors Avalanche energy rated
January 1998 Rev 1.000
PHP7N40E PHILIPS-PHP7N40E Datasheet
78Kb / 9P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.200
PHX10N40E PHILIPS-PHX10N40E Datasheet
74Kb / 8P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.200
PHX3N60E PHILIPS-PHX3N60E Datasheet
73Kb / 8P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.200
PHX8N50E PHILIPS-PHX8N50E Datasheet
74Kb / 8P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.300
PHP10N40E PHILIPS-PHP10N40E Datasheet
115Kb / 7P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.000
PHX4N60E PHILIPS-PHX4N60E Datasheet
75Kb / 8P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.200
PHP6N60E PHILIPS-PHP6N60E Datasheet
74Kb / 9P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.300
PHP7N60E PHILIPS-PHP7N60E Datasheet
91Kb / 10P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.400
PHX2N60E PHILIPS-PHX2N60E Datasheet
65Kb / 8P
   PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.200
More results


Html Pages

1 2 3 4 5 6 7


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com