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MBR2070CT 데이터시트(PDF) 1 Page - Diodes Incorporated

부품명 MBR2070CT
부품 상세설명  20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
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MBR2070CT 데이터시트(HTML) 1 Page - Diodes Incorporated

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MBR2070CT - MBR20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish/RoHS Compliant (Note 3)
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Ordering Information: See Page 2
Weight: 2.24 grams (approximate)
TO-220AB
Dim
Min
Max
A
14.48
15.75
B
10.00
10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70
14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T
A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
2070CT
MBR
2080CT
MBR
2090CT
MBR
20100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
100
V
RMS Reverse Voltage
VR(RMS)
49
56
63
70
V
Average Rectified Output Current (Note 1)
@ TC = 120°C
IO
20
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
150
A
Forward Voltage Drop
@ IF = 10A, Tj = 125°C
@ IF = 10A, Tj = 25°C
@ IF = 20A, Tj = 125°C
@ IF = 20A, Tj = 25°C
VFM
0.75
0.85
0.85
0.95
V
Peak Reverse Current
@ TA = 25°C
at Rated DC Blocking Voltage (Note 4)
@ TA = 125°C
IRM
0.10
100
mA
Typical Total Capacitance (Note 2)
CT
1000
pF
Typical Thermal Resistance Junction to Case (Note 1)
RθJC
2.0
°C/W
Voltage Rate of Change
dV/dt
10000
V/
μs
Operating Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175
°C
Notes:
1.
Thermal resistance junction to case mounted on heatsink.
2.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
3.
RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
4.
Short duration pulse test to minimize self-heating effect.
DS30019 Rev. 7 - 2
1 of 2
www.diodes.com
MBR2070CT-MBR20100CT
© Diodes Incorporated


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