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1N6857-1 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 1N6857-1
상세설명  SCHOTTKY BARRIER DIODES
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

1N6857-1 데이터시트(HTML) 2 Page - Microsemi Corporation

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64
1N5711, 1N5712, 1N6857, 1N6858
DSB5712 and DSB2810
INCLUDING -1 VERSIONS
0
.2
.4
.6
.8
1.0
1.2
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the DSB5712 and
DSB2810 Schottky Diodes.
0
.2
.4
.6
.8
1.0
1.2
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
1N5711.
0
5.0
10
15
20
25
30
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
DSB5712 and DSB2810
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
01020
30
40
50
60
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
1N5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at
Various Temperatures.
.1
1.0
10
100
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
100
10
1.0
.1
.01
100,000
10,000
1000
1
10
1
50
10
5
1
.5
.1
.05
.01
1000
100
10
1
10,000
1000
100
10
1.0


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