LFE18500X datasheet(7/10 Pages) PHILIPS

부품명	LFE18500X

상세설명	NPN silicon planar epitaxial microwave power transistor

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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7 / 10 page

December 1994

7

Philips Semiconductors

Product speciﬁcation

NPN silicon planar epitaxial

microwave power transistor

LFE18500X

Fig.5 Load power as a function of input power.

VCE = 24 V; f = 1850 MHz.

handbook, halfpage

04

8

12

16

60

20

0

40

MLC431

P L

(W)

I

=

CQ

400 mA

200 mA

100 mA

P (W)

i

Fig.6

Intermodulation distortion as a function

of average output power.

VCE = 24 V; f1 = 1849.9 MHz; f2 = 1850.1 MHz.

handbook, halfpage

MLC726

010

20

40

30

60

40

30

50

P

(W)

o (av)

20

CQ

I

=

200 mA

100 mA

400 mA

(dBc)

d im

Input and optimum load impedances

VCE =24V; ICQ = 0.2 A; Zo =10 Ω; typical values at PL =PL1 (see Figs 7 and 8).

f

(GHz)

Zi

(

Ω)

ZL

(

Ω)

1.80

5.0 + j4.9

2.0

− j2.0

1.85

5.5 + j2.0

1.8

− j1.2

1.90

3.7 + j0.6

1.6

− j1.6

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