전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

AM29LV800B 데이터시트(PDF) 20 Page - Advanced Micro Devices

부품명 AM29LV800B
상세설명  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Download  49 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV800B 데이터시트(HTML) 20 Page - Advanced Micro Devices

Back Button AM29LV800B_05 Datasheet HTML 16Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 17Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 18Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 19Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 20Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 21Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 22Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 23Page - Advanced Micro Devices AM29LV800B_05 Datasheet HTML 24Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 20 / 49 page
background image
18
Am29LV800B
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h retrieves the manufac-
turer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code.
A read cycle containing a sector address (SA) and the
address 02h in word mode (or 04h in byte mode)
returns 01h if that sector is protected, or 00h if it is
unprotected. Refer to Tables 2 and 3 for valid sector
addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up com-
mand. The program address and data are written
next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide
further controls or timings. The device automatically
provides internally generated program pulses and
verifies the programmed cell margin. Table 1 shows
the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. See “Write Operation
Status” for information on these status bits.
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that
a hardware reset immediately terminates the pro-
gramming operation. The program command
sequence should be reinitiated once the device has
reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1”, or cause the
Data# Polling algorithm to indicate the operation was
successful. However, a succeeding read will show that
the data is still “0”. Only erase operations can convert
a “0” to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to
program bytes or words to the device faster than
using the standard program command sequence. The
unlock bypass command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle containing the unlock bypass command,
20h. The device then enters the unlock bypass mode.
A two-cycle unlock bypass program command
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program command, A0h; the second
cycle contains the program address and data. Addi-
tional data is programmed in the same manner. This
mode dispenses with the initial two unlock cycles
required in the standard program command
sequence, resulting in faster total programming time.
Table 1 shows the requirements for the command
sequence.
During the unlock bypass mode, only the Unlock
Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
data 90h; the second cycle the data 00h. Addresses
are don’t care for both cycles. The device then returns
to reading array data.
Figure 3 illustrates the algorithm for the program
operation. See the Erase/Program Operations table in
“AC Characteristics” for parameters, and to Figure 17
for timing diagrams.
Note: See Table 1 for program command sequence.
Figure 3. Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress


유사한 부품 번호 - AM29LV800B_05

제조업체부품명데이터시트상세설명
logo
Advanced Micro Devices
AM29LV800B AMD-AM29LV800B_03 Datasheet
272Kb / 12P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory- Die Revision 2
More results

유사한 설명 - AM29LV800B_05

제조업체부품명데이터시트상세설명
logo
Advanced Micro Devices
AM29LV800B AMD-AM29LV800B Datasheet
569Kb / 42P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
SPANSION
AM29LV800D SPANSION-AM29LV800D_06 Datasheet
1Mb / 46P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Advanced Micro Devices
AM29LV800D AMD-AM29LV800D Datasheet
1Mb / 51P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
SPANSION
S29AL008J70BFI020 SPANSION-S29AL008J70BFI020 Datasheet
1Mb / 54P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008J70TFI020 SPANSION-S29AL008J70TFI020 Datasheet
1Mb / 54P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D SPANSION-S29AL008D_06 Datasheet
1Mb / 56P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D SPANSION-S29AL008D Datasheet
1Mb / 55P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008J SPANSION-S29AL008J Datasheet
1Mb / 54P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Advanced Micro Devices
AM29LL800B AMD-AM29LL800B Datasheet
534Kb / 40P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory
AM29F800B AMD-AM29F800B Datasheet
518Kb / 39P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com