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AM29DL800B ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 41 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29DL800B
์ƒ์„ธ๋‚ด์šฉ  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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AM29DL800B ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 41 Page - Advanced Micro Devices

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December 4, 2006 21519C4
Am29DL800B
39
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
ยฐC, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90ยฐC, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25ยฐC, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
14
sec
Byte Program Time
9
300
ยตs
Excludes system level
overhead (Note 5)
Word Program Time
11
360
ยตs
Chip Program Time
(Note 3)
Byte Mode
9
27
sec
Word Mode
5.8
17
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
โ€“1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
โ€“1.0 V
VCC + 1.0 V
VCC Current
โ€“100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150ยฐC
10
Years
125ยฐC
20
Years


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