AM29DL16XD_06 datasheet(23/57 Pages) AMD

부품명	AM29DL16XD

상세설명	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

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제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

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December 1, 2006 21533E5

Am29DL16xD

25

D A TA

SH EET

Table 11.

System Interface String

Table 12.

Device Geometry Definition

Addresses

(Word Mode)

Addresses

(Byte Mode)

Data

Description

1Bh

36h

0027h

V

CC Min. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Ch

38h

0036h

VCC Max. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Dh

3Ah

0000h

V

PP Min. voltage (00h = no VPP pin present)

1Eh

3Ch

0000h

V

PP Max. voltage (00h = no VPP pin present)

1Fh

3Eh

0004h

Typical timeout per single byte/word write 2N µs

20h

40h

0000h

Typical timeout for Min. size buffer write 2N

µs (00h = not supported)

21h

42h

000Ah

Typical timeout per individual block erase 2N ms

22h

44h

0000h

Typical timeout for full chip erase 2N ms (00h = not supported)

23h

46h

0005h

Max. timeout for byte/word write 2N times typical

24h

48h

0000h

Max. timeout for buffer write 2N times typical

25h

4Ah

0004h

Max. timeout per individual block erase 2N times typical

26h

4Ch

0000h

Max. timeout for full chip erase 2N times typical (00h = not supported)

Addresses

(Word Mode)

Addresses

(Byte Mode)

Data

Description

27h

4Eh

0015h

Device Size = 2N byte

28h

29h

50h

52h

0002h

0000h

Flash Device Interface description (refer to CFI publication 100)

2Ah

2Bh

54h

56h

0000h

Max. number of bytes in multi-byte write = 2N

(00h = not supported)

2Ch

58h

0002h

Number of Erase Block Regions within device

2Dh

2Eh

2Fh

30h

5Ah

5Ch

5Eh

60h

0007h

0000h

0020h

0000h

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

31h

32h

33h

34h

62h

64h

66h

68h

001Eh

0000h

0001h

Erase Block Region 2 Information

35h

36h

37h

38h

6Ah

6Ch

6Eh

70h

0000h

Erase Block Region 3 Information

39h

3Ah

3Bh

3Ch

72h

74h

76h

78h

0000h

Erase Block Region 4 Information

유사한 부품 번호 - AM29DL16XD_06

제조업체	부품명	데이터시트	상세설명
Advanced Micro Devices	AM29DL16XD	1Mb / 57P	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

More results

유사한 설명 - AM29DL16XD_06

제조업체	부품명	데이터시트	상세설명
Advanced Micro Devices	AM29DL16XD	1Mb / 57P	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
	AM29DL16XC	688Kb / 51P	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
	AM29DL322C	691Kb / 52P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
	AM29DL322D	1Mb / 54P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
SPANSION	AM29DL32XG	1Mb / 58P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Advanced Micro Devices	AM29DL320G	1Mb / 58P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
	AM29DL32XG	1,019Kb / 58P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
	AM29DL322D	1Mb / 56P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
SPANSION	AM49DL640BH	1Mb / 63P	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Advanced Micro Devices	AM29DL800B	580Kb / 43P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

More results

AM29DL16XD 데이터시트(PDF) 23 Page - Advanced Micro Devices

AM29DL16XD 데이터시트(HTML) 23 Page - Advanced Micro Devices

유사한 부품 번호 - AM29DL16XD_06

유사한 설명 - AM29DL16XD_06

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