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AM29DL16XD 데이터시트(HTML) 3 Page - Advanced Micro Devices

부품명 AM29DL16XD
상세내용  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL16XD 데이터시트(HTML) 3 Page - Advanced Micro Devices

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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21533
Rev: E Amendment: 5
Issue Date: December 1, 2006
Am29DL16xD
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
■ Multiple bank architectures
— Four devices available with different bank sizes (refer
to Table 2)
■ Secured Silicon Sector
— Current version of device has 64 Kbytes; future
versions will have 256 bytes
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
■ Package options
— 48-ball Very Thin Profile Fine-pitch BGA
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
— 48-pin TSOP
■ Top or bottom boot block
■ Manufactured on 0.23 µm process technology
— Compatible with Am29DL16xC devices
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast 70 ns
— Program time: 7 µs/word typical utilizing Accelerate function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per sector
■ 20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
■ WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system


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