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AM29F400BB-120DGI2 데이터시트(PDF) 11 Page - Advanced Micro Devices

부품명 AM29F400BB-120DGI2
상세설명  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F400BB-120DGI2 데이터시트(HTML) 11 Page - Advanced Micro Devices

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Am29F400B Known Good Die
SU PP L E ME NT
REVISION SUMMARY
Revision A (May 1997)
Initial release.
Revision B (January 1998)
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Revision B+1 (February 1998)
Distinctive Characteristics
The minimum guarantee per sector is now 1 million cycles.
Global
Added -75 and -90 speed options.
Pad Description
Corrected coordinates for pads 2, 19, 22, 35, 40, and 42.
Physical Specifications
Changed die thickness specification to ~20 mils.
Revision B+2 (May 1998)
Die Pad Locations
Moved AMD logo to above pad 23.
Revision C (June 1998)
Distinctive Characteristics
Changed “Manufactured on 0.35 µm process technology”
to “Manufactured on 0.32 µm process technology”.
General Description
Third paragraph: Changed “AMD’s 0.35 µm process
technology” to “AMD’s 0.32 µm process technology”.
Die Photograph
Replaced with photograph of Die Revision 2.
Die Pad Locations
Corrected the location of the AMD logo to above pad 22
from pad above pad 13. Modified figure to match new
die photograph.
Pad Description
Replaced table with new pad coordinates.
Physical Specifications
Die Dimensions: Changed to 135 mils x 198 mils, 3.43
mm x 5.03 mm from 141.34 mils x 207.48 mils, 3.59
mm x 5.27 mm.
Die Thickness: Added ~500 µm.
Pad Area Free of Passivation: Changed to 20.85 mils2
and 13,433 µm2 from 15.52 mils2 and 10,000 µm2.
Passivation: Changed to SiN/SOG/SiN from Nitride/
SOG/Nitride.
Manufacturing Information
Manufacturing ID: Changed to 98F02AK (top boot) and
98F02ABK (bottom boot) from 98965AK (top boot) and
98965ABK (bottom boot).
Fabrication Process: Changed to CS39S from CS39.
Die Revision: Changed to 2 from 1.
Revision C+1 (September 1998)
Page 5, Ordering Information
Package Type and Minimum Order Quantity: Changed
Waffle Pack to 140 die per 5 tray stack from 180 die per
5 tray stack. Changed Gel-Pak® Die Tray to 594 die per
6 tray stack from 378 die per 6 tray stack. Changed Sur-
ftape™ (Tape and Reel) to 2500 per 7-inch reel from
1800 per 7-inch reel.
Page 7, Physical Specifications
Die Dimensions: Changed to 3.42 mm x 5.02 mm from
3.43 mm x 5.03 mm.
Bond Pad Size: Changed to 4.7 mils x 4.7 mils and
119.7 µm x 119.7 µm from 3.74 mils x 3.74 mils and
95 µm x 95 µm.
Pad Area Free of Passivation: Changed to 13.98 mils2
and 9,025 µm2 from 20.85 mils2 and 13,433 µm2.
Bond Pad Metallization: Changed to Al/Cu from Al/Cu/Si.
Page 7, Manufacturing Information
Manufacturing ID (Top Boot): Changed to 98F02AK
from 98F02A.
Revision D (November 1998)
Global
Revised document specifications for die shrink from
0.35 µm to 0.32 µm process technology.
Terms and Conditions
Replaced warranty with new version.
Revision E (December 1998)
Packaging Information
Added section. Moved orientation information from die
photograph section into this section.
Revision E+1 (February 1999)
Die Pad Locations
Corrected top row of pad callouts.
Revision E+2 (June 14, 1999)
Physical Specifications
Corrected the bond pad dimensions.


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