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AM29DL640D 데이터시트(HTML) 3 Page - Advanced Micro Devices

부품명 AM29DL640D
상세내용  64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL640D 데이터시트(HTML) 3 Page - Advanced Micro Devices

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Publication# 23695
Rev: C Amendment/3
Issue Date: December 13, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL640D
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
Flexible BankTM architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
Manufactured on 0.23 µm process technology
Secured Silicon Sector: Extra 256 Byte sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: Can be read or programmed just
like other sectors. Once locked, data cannot be
changed
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PACKAGE OPTIONS
63-ball Fine Pitch BGA
■ 48-pin TSOP
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast as 90 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
Supports Common Flash Memory Interface (CFI)
Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This product has been retired and is not available for designs.
For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet
for specifications and ordering information.
For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the
S29PL064J Datasheet for specifications and ordering information.
Availability of this document is retained for reference and historical purposes only.


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