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AM29BDD160G ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29BDD160G
์ƒ์„ธ๋‚ด์šฉ  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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์ œ์กฐ์‚ฌ  AMD [Advanced Micro Devices]
ํ™ˆํŽ˜์ด์ง€  http://www.amd.com
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DATA SHEET
Publication# 24960
Rev: D Amendment: 5
Issue Date: June 7, 2006
Refer to AMDโ€™s Website (www.amd.com) for the latest information.
Am29BDD160G
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode,
Dual Boot, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
โ€” Data can be continuously read from one bank while
executing erase/program functions in other bank.
(โ€“40ยฐC to 85ยฐC, 56 MHz and below only)
โ€” Zero latency between read and write operations
โ€” Two bank architecture: 75%/25%
User-Defined x16 or x32 Data Bus
Dual Boot Block
โ€” Top and bottom boot in the same device
Flexible sector architecture
โ€” Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
Manufactured on 0.17 ยตm process technology
SecSi (Secured Silicon) Sector (256 Bytes)
โ€” Current version of device has 64 Kbytes; future
versions will have 256 bytes
โ€” Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by AMD
โ€” Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
Programmable Burst interface
โ€” Interface to any high performance processor
โ€” Modes of Burst Read Operation:
Linear Burst: 4 double words (x32), 8 words (x16)
and double words (x32), and 32 words (x16) with
wrap around
Single power supply operation
โ€” Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatible with JEDEC standards (JC42.4)
โ€” Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance read access
โ€” Initial/random access time as fast as 54 ns
โ€” Burst access time as fast as 9 ns for ball grid array
package
Ultra low power consumption
โ€” Burst Mode Read: 90 mA @ 66 MHz max
โ€” Program/Erase: 50 mA max
โ€” Standby mode: CMOS: 60 ยตA max
Minimum 1 million write cycles guaranteed per
sector
20 year data retention at 125ยฐC
VersatileI/O
TM control
โ€” Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO pin
โ€” 1.65 V to 2.75 V compatible I/O signals
SOFTWARE FEATURES
Persistent Sector Protection
โ€” A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only V
CC levels)
Password Sector Protection
โ€” A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
โ€” Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
โ€” Provides a software method of detecting program or
erase operation completion
HARDWARE FEATURES
Program Suspend/Resume & Erase
Suspend/Resume
โ€” Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/BY#),
and Write Protect (WP#) inputs
ACC input
โ€” Accelerates programming time for higher throughput
during system production
Package options
โ€” 80-pin PQFP
โ€” 80-ball Fortified BGA
NOTE: For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifica-
tions and ordering information.


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