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AM29BDD160G 데이터시트(HTML) 6 Page - Advanced Micro Devices

부품명 AM29BDD160G
상세내용  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDD160G 데이터시트(HTML) 6 Page - Advanced Micro Devices

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Am29BDD160G
June 7, 2006
All PPB Erase Command ....................................................... 43
DYB Write ............................................................................... 43
PPB Lock Bit Set .................................................................... 43
DYB Status ............................................................................. 43
PPB Status ............................................................................. 44
PPB Lock Bit Status ............................................................... 44
Non-volatile Protection Bit Program And Erase Flow ............. 44
Table 19. Memory Array Command Definitions (x32 Mode) ...........45
Table 20. Sector Protection Command Definitions (x32 Mode) ......46
Table 21. Memory Array Command Definitions (x16 Mode) ...........47
Table 22. Sector Protection Command Definitions (x16 Mode) ......48
DQ7: Data# Polling ................................................................. 49
RY/BY#: Ready/Busy# ........................................................... 49
Figure 6. Data# Polling Algorithm ................................................... 50
DQ6: Toggle Bit I .................................................................... 50
DQ2: Toggle Bit II ................................................................... 50
Reading Toggle Bits DQ6/DQ2 .............................................. 51
DQ5: Exceeded Timing Limits ................................................ 51
Figure 7. Toggle Bit Algorithm......................................................... 51
DQ3: Sector Erase Timer ....................................................... 52
Table 23. Write Operation Status ....................................................52
Figure 8. Maximum Negative Overshoot Waveform ....................... 53
Figure 9. Maximum Positive Overshoot Waveform......................... 53
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 10. I
CC1 Current vs. Time (Showing Active and Automatic Sleep
Currents) ......................................................................................... 55
Figure 11. Typical ICC1 vs. Frequency............................................. 55
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 12. Test Setup...................................................................... 56
Table 24. Test Specifications ..........................................................56
Key to Switching Waveforms . . . . . . . . . . . . . . . 56
Switching Waveforms . . . . . . . . . . . . . . . . . . . . . 56
Figure 13. Input Waveforms and Measurement Levels ................. 56
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 14. VCC and VIO Power-up Diagram ................................. 57
Figure 15. Conventional Read Operations Timings ....................... 60
Figure 16. Burst Mode Read (x32 Mode)....................................... 60
Figure 17. Asynchronous Command Write Timing ........................ 61
Figure 18. Synchronous Command Write/Read Timing................. 61
Figure 19. RESET# Timings .......................................................... 63
Figure 20. WP# Timing .................................................................. 63
Figure 21. Program Operation Timings.......................................... 65
Figure 22. Chip/Sector Erase Operation Timings .......................... 66
Figure 23. Back-to-back Cycle Timings ......................................... 66
Figure 24. Data# Polling Timings (During Embedded Algorithms). 67
Figure 25. Toggle Bit Timings (During Embedded Algorithms)...... 67
Figure 26. DQ2 vs. DQ6 for Erase and Erase Suspend Operations...
68
Figure 27. Synchronous Data Polling Timing/Toggle Bit Timings .. 68
Figure 28. Sector Protect/Unprotect Timing Diagram .................... 69
Figure 29. Alternate CE# Controlled Write Operation Timings ...... 71
Erase and Programming Performance . . . . . . . 72
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 72
PQFP and Fortified BGA Pin Capacitance . . . . . 72
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 73
PQR080–80-Lead Plastic Quad Flat Package ....................... 73
LAA 080–80-ball Fortified Ball Grid Array (13 x 11 mm) ......... 74
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 75


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