์ „์ž๋ถ€ํ’ˆ ๋ฐ์ดํ„ฐ์‹œํŠธ ๊ฒ€์ƒ‰์—”์ง„
  Korean  โ–ผ

Delete All
ON OFF
ALLDATASHEET.CO.KR

X  

Preview PDF Download HTML

AM41DL1624DB30IT ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 27 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM41DL1624DB30IT
์ƒ์„ธ๋‚ด์šฉ  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
Download  63 Pages
Scroll/Zoom Zoom In 100% Zoom Out
์ œ์กฐ์‚ฌ  AMD [Advanced Micro Devices]
ํ™ˆํŽ˜์ด์ง€  http://www.amd.com
Logo 

AM41DL1624DB30IT ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 27 Page - Advanced Micro Devices

Zoom Inzoom in Zoom Outzoom out
/ 63 page
 27 / 63 page
background image
26
Am41DL16x4D
P R E L IMINARY
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device
operations. Table 16 defines the valid register com-
mand sequences. Writing incorrect address and
data values or writing them in the improper se-
quence resets the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#f, whichever happens later. All data is latched
on the rising edge of WE# or CE#f, whichever hap-
pens first. Refer to the AC Characteristics section for
timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the c o r r es p on di ng bank enter s th e er as e- s u s -
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
again read array data with the same exception. See
the Erase Suspend/Erase Resume Commands sec-
tion for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
tion, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Flash Read-Only Operations table provides the
read parameters, and Figure 14 shows the timing
diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
donโ€™t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to reading array data. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to reading array data. If
the program command sequence is written to a bank
that is in the Erase Suspend mode, writing the reset
c o mmand r etur n s that bank to the er as e- s u s -
pend- r e ad m ode. O n c e pr ogr amm i ng begi ns ,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data. If a
bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns
that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to read-
ing array data (or erase-suspend-read mode if that
bank was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 16 shows the address and data requirements.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively pro-
gramming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the au-
to s e l e c t c o mm and. T he bank then enter s the
autoselect mode. The system may read at any ad-
dress within the same bank any number of times
witho ut i ni tiati ng ano ther a utos ele ct co mm and
sequence:
s A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
s A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
s A read cycle to an address containing a sector ad-
dress (SA) within the same bank, and the address
02h on A7โ€“A0 in word mode (or the address 04h on
A6โ€“A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. (Refer to Ta-
bles 6โ€“7 for valid sector addresses).
The system must write the reset command to return to
reading array data (or erase-suspend-read mode if the
bank was previously in Erase Suspend).


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53  54  55  56  57  58  59  60  61  62  63 


๋ฐ์ดํ„ฐ์‹œํŠธ Download



๊ด€๋ จ ๋ถ€ํ’ˆ๋ช…

๋ถ€ํ’ˆ๋ช…์ƒ์„ธ๋‚ด์šฉHtml View์ œ์กฐ์‚ฌ
AM41DL32X4G32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 4 Mbit 512 K x 8-Bit/256 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM42DL16X2DAm29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 2 Mbit 128 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM41DL6408G64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 8 Mbit 1 M x 8-Bit/512 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM41DL32X8G32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory and 8 Mbit 1 M x 8-Bit/512 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL400B_054 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL16XD_0616 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV400B_034 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL800B_068 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL322D_0532 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV160B_0516 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices

๋งํฌ URL



Privacy Policy
ALLDATASHEET.CO.KR
ALLDATASHEET ๊ฐ€ ๊ท€ํ•˜์— ๋„์›€์ด ๋˜์…จ๋‚˜์š”?  [ DONATE ]  

Alldatasheet๋Š”?   |   ๊ด‘๊ณ ๋ฌธ์˜    |   ์šด์˜์ž์—๊ฒŒ ์—ฐ๋ฝํ•˜๊ธฐ   |   ๊ฐœ์ธ์ •๋ณด์ทจ๊ธ‰๋ฐฉ์นจ   |   ์ฆ๊ฒจ์ฐพ๊ธฐ   |   ๋งํฌ๊ตํ™˜   |   ์ œ์กฐ์‚ฌ๋ณ„ ๊ฒ€์ƒ‰
All Rights Reservedยฉ Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn