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AM41DL1624DB30IT ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 59 Page - Advanced Micro Devices

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์ƒ์„ธ๋‚ด์šฉ  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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AM41DL1624DB30IT ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 59 Page - Advanced Micro Devices

 
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Am41DL16x4D
P R E L IMINARY
AC CHARACTERISTICS
Notes:
1. UB#s and LB#s controlled, CIOs must be high.
2. tCW is measured from CE1#s going low to the end of write.
3. t
WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. t
AS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP is measured from the beginning of write
to the end of write.
Figure 32.
SRAM Write Cycleโ€”UB#s and LB#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
tWC
CE1#s
CE2s
tAW
tBW
tDW
tDH
tWR (See Note 3)
tAS
(See Note 4)
tCW
(See Note 2)
tCW (See Note 2)
tWP
(See Note 5)


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AM42DL16X2DAm29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 2 Mbit 128 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
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AM29DL800B_068 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
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