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AM41DL3228GT35IS 데이터시트(PDF) 62 Page - Advanced Micro Devices |
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AM41DL3228GT35IS 데이터시트(HTML) 62 Page - Advanced Micro Devices |
62 / 66 page September 5, 2002 Am41DL32x8G 61 PR ELI M I NARY Flash Erase And Programming Performance Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 16 and 18 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. FLASH LATCHUP CHARACTERISTICS Note: Includes all pins except V CC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Note: 7.Test conditions TA = 25°C, f = 1.0 MHz. FLASH DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.4 5 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 28 sec Byte Program Time 5 150 µs Excludes system level overhead (Note 5) Word Program Time 7 210 µs Accelerated Byte/Word Program Time 4 120 µs Chip Program Time (Note 3) Byte Mode 21 63 sec Word Mode 14 42 Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to V SS on all I/O pins –1.0 V V CC + 1.0 V V CC Current –100 mA +100 mA Parameter Symbol Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 11 14 pF C OUT Output Capacitance V OUT = 0 12 16 pF CIN2 Control Pin Capacitance VIN = 0 14 16 pF C IN3 WP#/ACC Pin Capacitance V IN = 0 17 20 pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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