전자부품 데이터시트 검색엔진
  Korean  ▼

Delete All
ON OFF
ALLDATASHEET.CO.KR

X  

Preview PDF Download HTML

AM29BDS643G 데이터시트(HTML) 22 Page - Advanced Micro Devices

부품명 AM29BDS643G
상세내용  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Download  49 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS643G 데이터시트(HTML) 22 Page - Advanced Micro Devices

Back Button AM29BDS643G 데이터시트 HTML 18Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 19Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 20Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 21Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 22Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 23Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 24Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 25Page - Advanced Micro Devices AM29BDS643G 데이터시트 HTML 26Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 22 / 49 page
background image
20
Am29BDS643G
25692A2 May 8, 2006
D A TA
SH EE T
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 10 defines the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence
resets the device to reading array data.
All addresses are latched on the rising edge of AVD#.
All data is latched on the rising edge of WE#. Refer to
the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data in asynchronous mode. Each bank is
ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-sus-
pend-read mode, after which the system can read data
from any non-erase-suspended sector. After com-
pleting a programming operation in the Erase Suspend
mode, the system may once again read array data with
the same exception. See the Erase Suspend/Erase
Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation,
or if the bank is in the autoselect mode. See the next
section, Reset Command, for more information.
Se e a l so Re qu ir em en t s f o r Asyn chr o n o u s
Read Operation (Non-Burst) and Requirements for
Synchronous (Burst) Read Operation in the Device
Bus Operations section for more information. The
Asynchronous Read and Synchronous/Burst Read
tables provide the read parameters, and Figures 9 and
11 show the timings.
Set Configuration Register Command Se-
quence
The configuration register command sequence
instructs the device to set a particular number of clock
cycles for the initial access in burst mode. The number
of wait states that should be programmed into the
device is directly related to the clock frequency. The
first two cycles of the command sequence are for
unlock purposes. On the third cycle, the system should
write C0h to the address associated with the intended
wait state setting (see Table 8). Address bits A16–A12
determine the setting. Note that addresses A19–A17
are shown as “0” but are actually don’t care.
Table 8.
Burst Modes
Note: The burst mode is set in the third cycle of the Set Wait State command sequence.
Upon power up, the device defaults to the maximum
seven cycle wait state setting. It is recommended that
the wait state command sequence be written, even if
the default wait state value is desired, to ensure the
device is set as expected. A hardware reset will set the
wait state to the default setting.
Handshaking Feature
The host system should set address bits A16–A12 to
“00010” for a clock frequency of 40 MHz or to “00011”
for a clock frequency of 54 or 66 MHz, assuming con-
tinuous burst is desired in both cases.
Table 9 describes the typical number of clock cycles
(wait states) for various conditions.
Burst
Mode
Third Cycle Addresses for Wait States
Wait States
01
234
5
Clock Cycles
23
456
7
Continuous
00555h
01555h
02555h
03555h
04555h
05555h
8-word Linear
08555h
09555h
0A555h
0B555h
0C555h
0D555h
16-word Linear
10555h
11555h
12555h
13555h
14555h
15555h
32-word Linear
18555h
19555h
1A555h
1B555h
1C555h
1D555h


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49 


데이터시트 Download

Go To PDF Page

관련 부품명

부품명상세내용Html View제조사
AM29BDS128H128 or 64 Megabit 8 M or 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29BDS320G32 Megabit 2 M x 16-Bit 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory 1 2 3 4 5 MoreSPANSION
AM42BDS6408HCMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory and 8 Mbit 512 K x 16-Bit SRAM 1 2 3 4 5 MoreSPANSION
AM29BDS640G64 Megabit 4 M x 16-Bit 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM42BDS640AG64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 16 Mbit 1 M x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDL129H128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDL127H128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDS322D32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only 1.8 V to 2.2 V Simultaneous Read/Write Page-Mode Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29BDD160G_0616 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode Dual Boot Simultaneous Read/Write Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM41PDS3224D32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Operation Page Mode Flash Memory and 4 Mbit 512 K x 8-Bit/256 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices

링크 URL



Privacy Policy
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn