 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
AM29BDS643G 데이터시트(HTML) 33 Page - Advanced Micro Devices |
|
||||||||||||||||||||||||||||||
AM29BDS643G 데이터시트(HTML) 33 Page - Advanced Micro Devices |
|
|
33 / 49 page 
May 8, 2006 25692A2 Am29BDS643G 31 D A TA SH EE T DC CHARACTERISTICS CMOS Compatible Note: 1. Maximum ICC specifications are tested with VCC = VCCmax. 2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3. 5. Total current during accelerated programming is the sum of VPP and VCC currents. 6. Specifications assume 8 I/Os switching. Parameter Description Test Conditions (Note 1) Min Typ Max Unit ILI Input Load Current VIN = VSS to VCC, VCC = VCCmax ±1 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCCmax ±1 µA ICCB VCC Active Burst Read Current (Note 6) CE# = VIL, OE# = VIL 25 30 mA ICC1 VCC Active Asynchronous Read Current CE# = VIL, OE# = VIH 5 MHz 12 16 mA 1 MHz 3.55mA ICC2 VCC Active Write Current (Note 3) CE# = VIL, OE# = VIH, VPP = VIH 15 40 mA ICC3 VCC Standby Current (Note 4) CE# = VIH, RESET# = VIH 0.2 10 µA ICC4 VCC Reset Current RESET# = VIL, CLK = VIL 0.2 10 µA ICC5 VCC Active Current (Read While Write) CE# = VIL, OE# = VIL 40 60 mA IPP Accelerated Program Current (Note 5) CE# = VIL, OE# = VIH, VPP = 12.0 ± 0.5 V VPP 715 mA VCC 510 mA VIL Input Low Voltage –0.5 0.4 V VIH Input High Voltage VCC – 0.4 VCC + 0.2 V VOL Output Low Voltage IOL = 100 µA, VCC = VCC min 0.1 V VOH Output High Voltage IOH = –100 µA, VCC = VCC min VCC – 0.1 V VID Voltage for Accelerated Program 11.5 12.5 V VLKO Low VCC Lock-out Voltage 1.0 1.4 V |
Korean ▼ 
English
Chinese
German
Japanese
Russian
Spanish
French
Italian
Portuguese
Polish
Vietnamese
