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AM29BDS643G 데이터시트(HTML) 44 Page - Advanced Micro Devices

부품명 AM29BDS643G
상세내용  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS643G 데이터시트(HTML) 44 Page - Advanced Micro Devices

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Am29BDS643G
25692A2 May 8, 2006
D A TA
SH EE T
AC CHARACTERISTICS
Note: 8-word linear burst mode shown. 16- and 32-word linear burst read modes behave similarly.
Figure 18.
8-, 16-, and 32-Word Linear Burst
Address Wrap Around
Note: Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60.
Figure 19.
Latency with Boundary Crossing (54 MHz and 66 MHz)
CLK
Address (hex)
D0
D1
D2
A/DQ0:
A/DQ15
OE#,
CE#
Address wraps back to beginning of address group.
39
39
3A
3B
3C
3D
3E
3F
38
Initial Access
VIL
VIH
AVD#
VIL
VIH
D3
D4
D5
D6
D7
CLK
Address (hex)
C59
C60
C61
C62
C62
C62
C63
C64
C65
C66
D59
D60
D61
D62
D63
D64
D65
D66
(stays high)
AVD#
RDY
A/DQ0:
A/DQ15
OE#,
CE#
(stays low)
Address boundary occurs every 64 words, beginning at address
00003Eh: 00007Eh, 0000BEh, etc. Address 000000h is also a boundary crossing.
3B
3C
3D
3E
3E
3E
3F
40
41
42
latency
tRACC


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