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AM29BDS643G 데이터시트(HTML) 47 Page - Advanced Micro Devices

부품명 AM29BDS643G
상세내용  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS643G 데이터시트(HTML) 47 Page - Advanced Micro Devices

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May 8, 2006 25692A2
Am29BDS643G
45
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 1.8 V V
CC, 1 million cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.8 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
0.4
5
s
Excludes 00h programming
prior to erasure (Note 4)
8 Kword
0.4
5
Chip Erase Time
54
s
Word Programming Time
11.5
210
µs
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
120
µs
Chip Programming Time (Note 3)
48
144
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
16
48
s
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years


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