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AM29BDS640G ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 5 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29BDS640G
์ƒ์„ธ๋‚ด์šฉ  64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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AM29BDS640G ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 5 Page - Advanced Micro Devices

 
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May 9, 2006 25903C2
Am29BDS640G
3
Data
Sheet
The sector erase architecture allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically in-
hibits write operations during power transitions. The device also offers two types of data
protection at the sector level. The sector lock/unlock command sequence disables or
re-enables both program and erase operations in any sector. When at VIL, WP# locks
sectors 0 and 1 (bottom boot device) or sectors 132 and 133 (top boot device).
The device offers two power-saving features. When addresses have been stable for a
specified amount of time, the device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in
both modes.
Spansion flash technology combines years of flash memory manufacturing experience to
produce the highest levels of quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The
data is programmed using hot electron injection.


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AM29DL640G_0564 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory 1 2 3 4 5 MoreSPANSION
AM29DL640D_0564 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM41DL3208G32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 8 Mbit 1 M x 8-Bit/512 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices

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