전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

AM41PDS3224DT10IT 데이터시트(PDF) 24 Page - Advanced Micro Devices

부품명 AM41PDS3224DT10IT
상세설명  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
Download  59 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM41PDS3224DT10IT 데이터시트(HTML) 24 Page - Advanced Micro Devices

Back Button AM41PDS3224DT10IT Datasheet HTML 20Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 21Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 22Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 23Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 24Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 25Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 26Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 27Page - Advanced Micro Devices AM41PDS3224DT10IT Datasheet HTML 28Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 24 / 59 page
background image
May 13, 2002
Am41PDS3224D
23
P R E L IMINARY
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect mode,
and the system may read any number of autoselect
codes without reinitiating the command sequence.
Table 10 shows the address and data requirements for
the command sequence. To determine sector protec-
tion information, the system must write to the appropri-
ate sector group address (SGA). Tables 4 and 6 show
the address range associated with each sector.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 16-byte random Electronic Serial Num-
ber (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the de-
vice to normal operation. Table 10 shows the address
and data requirements for both command sequences.
See also “SecSi (Secured Silicon) Sector Flash Mem-
ory Region” for further information. Note that a hard-
ware reset (RESET#=V
IL) w ill reset the dev ic e to
reading array data.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 10 shows the address
and data requirements for the program command se-
quence.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Flash Write Oper-
ation Status section for information on these status
bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once the device has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram words to the device faster than using the stan-
dard progr am c omma nd se quence. The unloc k
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 10 shows the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to reading array data. See Figure
3 for the unlock bypass algorithm.


유사한 부품 번호 - AM41PDS3224DT10IT

제조업체부품명데이터시트상세설명
logo
Advanced Micro Devices
AM41PDS3228D AMD-AM41PDS3228D Datasheet
996Kb / 59P
   32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41PDS3228DB10IS AMD-AM41PDS3228DB10IS Datasheet
996Kb / 59P
   32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41PDS3228DB10IT AMD-AM41PDS3228DB10IT Datasheet
996Kb / 59P
   32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41PDS3228DB11IS AMD-AM41PDS3228DB11IS Datasheet
996Kb / 59P
   32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41PDS3228DB11IT AMD-AM41PDS3228DB11IT Datasheet
996Kb / 59P
   32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
More results

유사한 설명 - AM41PDS3224DT10IT

제조업체부품명데이터시트상세설명
logo
Advanced Micro Devices
AM41PDS3228D AMD-AM41PDS3228D Datasheet
996Kb / 59P
   32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL32X4G AMD-AM41DL32X4G Datasheet
1Mb / 65P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41DL16X4D AMD-AM41DL16X4D Datasheet
980Kb / 63P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM42DL32X4G AMD-AM42DL32X4G Datasheet
1Mb / 64P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM29DL400B AMD-AM29DL400B Datasheet
534Kb / 42P
   4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400B AMD-AM29DL400B_05 Datasheet
1Mb / 47P
   4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM41DL3208G AMD-AM41DL3208G Datasheet
1Mb / 65P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM42DL6404G AMD-AM42DL6404G Datasheet
1,022Kb / 61P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM49DL640BG AMD-AM49DL640BG Datasheet
1Mb / 62P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (512 K x 16-Bit) Pseudo Static RAM
AM42DL16X4D AMD-AM42DL16X4D Datasheet
941Kb / 61P
   Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com