AM42BDS640AG datasheet(69/72 Pages) AMD

부품명	AM42BDS640AG

상세설명	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM

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제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

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69 / 72 page

68

Am42BDS640AG

November 1, 2002

P R E L I M INARY

FLASH ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 2.0 V V

CC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90

°C, V

CC = 1.8 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table

14 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

FLASH LATCHUP CHARACTERISTICS

Note: Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

PACKAGE PIN CAPACITANCE

Note:Test conditions T

A = 25°C, f = 1.0 MHz.

FLASH DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time (32 Kword or 8 Kword)

0.4

5

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

54

sec

Word Program Time

11.5

210

µs

Excludes system level

overhead (Note 5)

Accelerated Word Program Time

4

120

µs

Chip Program Time (Note 3)

48

144

sec

Accelerated Chip Program Time

16

48

sec

Description

Min

Max

Input voltage with respect to VSS on all pins except I/O pins

(including OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

V

CC + 1.0 V

V

CC Current

–100 mA

+100 mA

Parameter

Symbol

Description

Test Setup

Typ

Max

Unit

C

IN

Input Capacitance

V

IN = 0

11

14

pF

C

OUT

Output Capacitance

V

OUT = 0

12

16

pF

C

IN2

Control Pin Capacitance

V

IN = 0

14

16

pF

C

IN3

WP#/ACC Pin Capacitance

V

IN = 0

17

20

pF

Parameter Description

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years

유사한 부품 번호 - AM42BDS640AG

제조업체	부품명	데이터시트	상세설명
SPANSION	AM42BDS640AG	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	AM42BDS640AGBC8IS	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	AM42BDS640AGBC8IT	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	AM42BDS640AGBC9IS	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	AM42BDS640AGBC9IT	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

More results

유사한 설명 - AM42BDS640AG

제조업체	부품명	데이터시트	상세설명
SPANSION	AM42DL640AH	1,011Kb / 60P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
	AM49PDL640AG	954Kb / 69P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
	AM49DL640AH	995Kb / 63P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
Advanced Micro Devices	AM42DL640AG	916Kb / 62P	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
Advanced Micro Devices	AM50DL128CG	888Kb / 63P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
SPANSION	AM49PDL127AH	1Mb / 82P	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM
Advanced Micro Devices	AM42DL6404G	1,022Kb / 61P	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
SPANSION	AM29BDS640G	899Kb / 65P	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Advanced Micro Devices	AM29BDS643D	693Kb / 46P	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Advanced Micro Devices	AM29BDS643G	714Kb / 49P	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

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AM42BDS640AG 데이터시트(PDF) 69 Page - Advanced Micro Devices

AM42BDS640AG 데이터시트(HTML) 69 Page - Advanced Micro Devices

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