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L640MT12RI 데이터시트(PDF) 4 Page - Advanced Micro Devices

부품명 L640MT12RI
상세설명  64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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Am29LV640MT/B
26190C8 February 1, 2007
D A TA
SH EE T
GENERAL DESCRIPTION
The Am29LV640M is a 64 Mbit, 3.0 volt single power
supply flash memory device organized as 4,194,304
wo rds o r 8,388 ,6 08 by tes. T he device has an
8-bit/16-bit bus and can be programmed either in the
host system or in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (V
CC) and an I/O voltage range (VIO), as
specified in Product Selector Guide on page 6 and Or-
dering Information on page 10. The device is offered in
a 48-pin TSOP, 63-ball Fine-pitch BGA or 64-ball Forti-
fied BGA package. Each device has separate chip en-
able (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V
CC input, a high-voltage accelerated program
(ACC) function provides shorter programming times
through increased current on the WP#/ACC input. This
feature is intended to facilitate factory throughput dur-
ing system production, but can also be used in the
field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to deter-
mine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection measures include a low
V
CC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This is achieved in-system or via programming equip-
ment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Sus-
pend/Program Resume feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin can be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The Write Protect (WP#) feature protects the top or
bottom two sectors by asserting a logic low on the
WP#/ACC pin. The protected sector is still protected
even during accelerated programming.
T he Secured Silicon Sector pr o v ide s a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.


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