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AM29PDL640G98WSI 데이터시트(PDF) 3 Page - Advanced Micro Devices

부품명 AM29PDL640G98WSI
상세설명  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 26573
Rev: B Amendment/+2
Issue Date: December 13, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29PDL640G
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only,
Simultaneous Read/Write Flash Memory with Enhanced
VersatileIOTM Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
64 Mbit Page Mode device
— Page size of 8 words: Fast page read access from
random locations within the page
Single power supply operation
— Full Voltage range: 2.7 to 3.1 volt read, erase, and
program operations for battery-powered applications
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
FlexBank Architecture
— 4 separate banks, with up to two simultaneous
operations per device
— Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)
— Bank B: 24 Mbit (32 Kw x 48)
— Bank C: 24 Mbit (32 Kw x 48)
— Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
Enhanced VersatileI/OTM (VIO) Control
— Output voltage generated and input voltages tolerated
on all control inputs and I/Os is determined by the
voltage on the V
IO pin
SecSiTM (Secured Silicon) Sector region
— Up to 128 words accessible through a command
sequence
Both top and bottom boot blocks in one device
Manufactured on 0.17 µm process technology
20-year data retention at 125°C
Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
High Performance
— Page access times as fast as 25 ns
— Random access times as fast as 65 ns
Power consumption (typical values at 10 MHz)
— 25 mA active read current
— 15 mA program/erase current
— 0.2 µA typical standby mode current
SOFTWARE FEATURES
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV
families
CFI (Common Flash Interface) complaint
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or
program operations in other sectors of same bank
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array
data
WP#/ACC (Write Protect/Accelerate) input
—At VIL, protects the first and last two 4K word sectors,
regardless of sector protect/unprotect status
—At VIH, allows removal of sector protection
—At V
HH, provides faster programming times in a factory
setting
Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector
— Sectors can be locked and unlocked in-system at V
CC
level
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-defined 64-bit password
Package options
— 63-ball Fine-pitch BGA
— 80-ball Fine-pitch BGA
This product has been retired and is not available for designs. For new and current designs, S29PL064J supersedes Am29PDL640G and is the factory-recommended migration path. Please
refer to the S29PL064J datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.


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